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BUZ 31 L SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated * Logic Level Pin 1 G Type BUZ 31 L Pin 2 D Pin 3 S VDS 200 V ID 13.5 A RDS(on) 0.2 Package TO-220 AB Ordering Code C67078-S1322-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 13.5 Unit A ID IDpuls 54 TC = 28 C Pulsed drain current TC = 25 C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 13.5 9 mJ ID = 13.5 A, VDD = 50 V, RGS = 25 L = 1.65 mH, Tj = 25 C Gate source voltage Gate-source peak voltage,aperiodic Power dissipation 200 VGS Vgs Ptot 14 20 V W TC = 25 C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 75 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 1.67 75 E 55 / 150 / 56 C K/W Semiconductor Group 1 07/96 BUZ 31 L Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 200 1.6 0.1 10 10 0.16 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 1.2 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 A VDS = 200 V, VGS = 0 V, Tj = 25 C VDS = 200 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS 100 nA 0.2 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 5 V, ID = 7 A Semiconductor Group 2 07/96 BUZ 31 L Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 5 12 1200 200 100 - S pF 1600 300 150 ns 25 40 VDS 2 * ID * RDS(on)max, ID = 7 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Rise time tr 80 120 VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Turn-off delay time td(off) 210 270 VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Fall time tf 65 85 VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Semiconductor Group 3 07/96 BUZ 31 L Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A 1.2 180 1.2 13.5 54 V 1.6 ns C Values typ. max. Unit ISM VSD trr Qrr TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = 27 A Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 07/96 BUZ 31 L Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 5 V 14 A 80 W 12 Ptot 60 ID 11 10 50 9 8 40 7 6 30 5 4 20 3 10 0 0 2 1 0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 2 t = 3.1s p Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 K/W D A ID DS /I 10 s ZthJC 100 s =V 10 0 R 10 1 DS (o n) 1 ms 10 -1 D = 0.50 0.20 10 0 10 ms 0.10 10 -2 0.05 0.02 DC single pulse 0.01 10 -1 0 10 10 1 10 2 V 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 31 L Typ. output characteristics ID = (VDS) parameter: tp = 80 s 30 A 26 Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 0.65 Ptot = 75W lkj i h g f e VGS [V] a 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 9.0 10.0 0.55 a b c d ID 24 22 20 18 16 14 12 10 8 6 4 2 0 0 a c db c d e f g h i RDS (on) 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 VGS [V] = a 3.0 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i 6.5 7.0 j 8.0 k l 9.0 10.0 bj k l e g i k f h j l 2 4 6 8 V 11 0.00 0 4 8 12 16 20 A 26 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max 22 A parameter: tp = 80 s, VDS2 x ID x RDS(on)max 18 S ID 18 16 gfs 14 12 14 12 10 8 6 4 4 2 0 0 1 2 3 4 5 6 7 8 V 10 2 0 0 2 4 6 8 10 12 14 16 A 20 10 8 6 VGS ID Semiconductor Group 6 07/96 BUZ 31 L Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 7 A, VGS = 5 V 0.65 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 0.55 RDS (on) 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 -60 -20 20 60 100 C 160 VGS(th) 3.6 3.2 2.8 2.4 98% 98% typ 2.0 typ 1.6 2% 1.2 0.8 0.4 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 2 nF C 10 0 A IF Ciss 10 1 Coss 10 -1 Crss 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 31 L Avalanche energy EAS = (Tj ) parameter: ID = 13.5 A, VDD = 50 V RGS = 25 , L = 1.65 mH 220 mJ Typ. gate charge VGS = (QGate) parameter: ID puls = 21 A 16 V EAS 180 160 140 120 VGS 12 10 8 100 80 60 40 2 20 0 20 0 40 60 80 100 120 C 160 0 20 6 0,2 VDS max 0,8 VDS max 4 40 60 80 100 120 nC 150 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 07/96 BUZ 31 L Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96 |
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